The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2015

Filed:

Aug. 21, 2014
Applicant:

Newport Fab, Llc, Newport Beach, CA (US);

Inventors:

Paul D. Hurwitz, Irvine, CA (US);

Robert L. Zwingman, Walnut, CA (US);

Assignee:

Newport Fab, LLC, Newport Beach, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76283 (2013.01);
Abstract

Disclosed are a structure for electrical signal isolation between adjacent devices situated in a top semiconductor layer of the structure and an associated method for the structure's fabrication. The structure includes a trench extending through the top semiconductor layer and into a base oxide layer below the top semiconductor layer. A handle wafer is situated below the base oxide layer and a void is disposed in the handle wafer below the trench. A bottom opening of the trench connects the main body of the trench with the void forming a continuous cavity including the main body, the bottom opening of the trench, and the void such that the void improves electrical signal isolation between the adjacent devices situated in the top semiconductor layer. Unetched portions of the handle wafer are then available to provide mechanical support to the top semiconductor layer.


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