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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8956941 B1

PDFFull Text
Date of Patent:
Feb. 17, 2015

Filed:

Jan. 15, 2014

Manufacturing method of semiconductor device

Applicant:

Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;

Inventors:

Eiji Tsukuda, Kanagawa, JP;

Kozo Katayama, Kanagawa, JP;

Kenichiro Sonoda, Kanagawa, JP;

Tatsuya Kunikiyo, Kanagawa, JP;

Assignee:

Renesas Electronics Corporation, Kanagawa, JP;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Karen Kusumakar

Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 29/792 (2006.01); H01L 27/115 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66833 (2013.01); H01L 29/792 (2013.01); H01L 27/11568 (2013.01); H01L 27/11573 (2013.01); H01L 29/4234 (2013.01);
Abstract

To provide a manufacturing method of a semiconductor device including a memory cell having a higher reliability. First and second stacked structures in a memory cell formation region are formed so as to have a larger height than a third stacked structure in a transistor formation region, and then an interlayer insulating layer is formed so as to cover these stacked structures and then polished.

Find Patent Forward Citations

Tsukuda, Eiji. (2015). Manufacturing method of semiconductor device (U.S. Patent No. 8956941). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8956941

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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