The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2015
Filed:
Oct. 22, 2012
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Samsung Display Co., Ltd., , KR;
Abstract
In a method of forming an active pattern, a gate metal layer is formed on a base substrate. The gate metal layer is patterned to form a gate line, and a gate pattern spaced apart from the gate line. A gate insulation layer is formed on the base substrate including the gate line and the gate pattern thereon, to form a first protruded boundary surface corresponding to an area including the gate pattern. An amorphous semiconductor layer is formed on the base substrate including the gate insulation layer thereon, to form a second protruded boundary surface corresponding to the first protruded boundary surface. The amorphous semiconductor layer is crystallized by illuminating a laser to the amorphous semiconductor layer on the second protruded boundary surface.