The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2015
Filed:
Feb. 22, 2010
Hendrik Zachmann, Leipzig, DE;
Karsten Otte, Leipzig, DE;
Horst Neumann, Delitzsch, DE;
Frank Scholze, Brandis, DE;
Lutz Pistol, Taucha, DE;
Hendrik Zachmann, Leipzig, DE;
Karsten Otte, Leipzig, DE;
Horst Neumann, Delitzsch, DE;
Frank Scholze, Brandis, DE;
Lutz Pistol, Taucha, DE;
Solarion AG, Zwenkau, DE;
Abstract
The invention relates to a method and a device for producing a semiconductor layer. The problem addressed is that of increasing the deposition rate of the layer constituents and significantly improving the efficiency of a resulting solar cell. At the same time, the material costs are intended to be reduced. The problem is solved by virtue of the fact that, in a vacuum chamber, metal evaporator sources release Cu, In and/or Ga or the chalcogenide compounds, the latter are focused as metal vapor jets onto the substrate, and Se and/or S emerge(s) in an ionized fashion from a chalcogen low-energy wide-beam ion source and this beam is focused onto the surface of the substrate in such a way that it overlaps the metal vapor jets. A device for carrying out the method is described.