The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2015
Filed:
Sep. 20, 2012
Analog Devices, Inc., Norwood, MA (US);
John R. Martin, Foxborough, MA (US);
Timothy J. Frey, Hudson, MA (US);
Christine H. Tsau, Arlington, MA (US);
Michael W. Judy, Ipswich, MA (US);
Analog Devices, Inc., Norwood, MA (US);
Abstract
A method of forming a MEMS device provides first and second wafers, where at least one of the first and second wafers has a two-dimensional array of MEMS devices. The method deposits a layer of first germanium onto the first wafer, and a layer of aluminum-germanium alloy onto the second wafer. To deposit the alloy, the method deposits a layer of aluminum onto the second wafer and then a layer of second germanium to the second wafer. Specifically, the layer of second germanium is deposited on the layer of aluminum. Next, the method brings the first wafer into contact with the second wafer so that the first germanium in the aluminum-germanium alloy contacts the second germanium. The wafers then are heated when the first and second germanium are in contact, and cooled to form a plurality of conductive hermetic seal rings about the plurality of the MEMS devices.