The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8956789 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 17, 2015

Filed:

Mar. 15, 2013
Applicant:

Globalfoundries, Inc., Grand Cayman, KY;

Inventor:

Sudharshanan Raghunathan, Guilderland, NY (US);

Assignee:

GLOBALFOUNDRIES, Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 22/10 (2013.01);
Abstract

Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes patterning a first photoresist layer overlying a mask blank that is mounted on a first chuck to form a first patterned photoresist layer. The mask blank is selectively etched using the first patterned photoresist layer to form a first patterned mask. The first patterned mask is mounted on a second chuck and a non-flatness compensation is determined. The first patterned mask is mounted on the first chuck and a second photoresist layer is patterned overlying the first patterned mask to form a second patterned photoresist layer. The second patterned photoresist layer includes a device pattern that has been adjusted using the non-flatness compensation. The first patterned mask is selectively etched using the second patterned photoresist layer to form a second patterned mask.


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