The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2015

Filed:

Jun. 30, 2011
Applicants:

Tuqiang LI, Cupertino, CA (US);

Donald C. Stafford, San Jose, CA (US);

Sudhir S. Malhotra, Fremont, CA (US);

Tsutomu T. Yamashita, San Jose, CA (US);

Inventors:

Tuqiang Li, Cupertino, CA (US);

Donald C. Stafford, San Jose, CA (US);

Sudhir S. Malhotra, Fremont, CA (US);

Tsutomu T. Yamashita, San Jose, CA (US);

Assignee:

WD Media, LLC, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

Media may be produced with narrow c-axis dispersion while having small grain size and high grain density. A dual seed layer design and a substrate bias voltage may be applied during deposition of the seed layer are used in the media. In some embodiments, the first seed layer is an amorphous material because of a high content of elements with large atomic sizes. Application of the substrate bias during deposition of the second seed layer may reduce the grain size and may narrow c-axis dispersion.


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