The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2015
Filed:
Mar. 19, 2012
Applicants:
Shoko Suyama, Kawasaki, JP;
Yoshiyasu Ito, Yokohama, JP;
Shigeki Maruyama, Yokohama, JP;
Norihiko Handa, Narashino, JP;
Inventors:
Shoko Suyama, Kawasaki, JP;
Yoshiyasu Ito, Yokohama, JP;
Shigeki Maruyama, Yokohama, JP;
Norihiko Handa, Narashino, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
C03B 29/00 (2006.01); C04B 35/573 (2006.01); C04B 37/00 (2006.01); B82Y 30/00 (2011.01); C04B 33/34 (2006.01); C04B 35/56 (2006.01);
U.S. Cl.
CPC ...
C04B 37/005 (2013.01); C04B 2237/708 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5445 (2013.01); C04B 2237/38 (2013.01); C04B 2235/77 (2013.01); C04B 35/573 (2013.01); C04B 37/008 (2013.01); C04B 2235/5427 (2013.01); C04B 2235/5454 (2013.01); C04B 2237/16 (2013.01); C04B 2237/62 (2013.01); C04B 2237/365 (2013.01); C04B 2235/3826 (2013.01); C04B 2237/368 (2013.01); C04B 2235/96 (2013.01); C04B 2235/48 (2013.01); C04B 2235/422 (2013.01); C04B 2235/424 (2013.01); C04B 2237/348 (2013.01); C04B 2235/9607 (2013.01); C04B 37/006 (2013.01); B82Y 30/00 (2013.01); C04B 2237/363 (2013.01);
Abstract
A ceramics composite member includes a structure in which a first ceramic member and a second ceramic member are integrated with a joint portion. The joint portion has a texture in which a silicon phase having an average diameter of 0.05 μm or more and 10 μm or less is continuously provided in a network form in interstices of silicon carbide particles having an average particle diameter of 0.1 μm or more and 0.1 mm or less.