The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2015
Filed:
Nov. 20, 2012
National Taiwan University of Science and Technology, Taipei, TW;
Pin-Ju Huang, Taipei, TW;
Yee-Wen Yen, Taipei, TW;
National Taiwan University of Science and Technology, Taipei, TW;
Abstract
The present invention relates to a method for manufacturing Ni/In/Sn/Cu multilayer structure, in which a Ni/In/Sn/Cu multilayer structure is formed between a first substrate (copper substrate) and a second substrate (such as silicon wafer), and further, a plurality of intermetallic layers are formed in the Ni/In/Sn/Cu multilayer structure through a reflow bonding process and an aging heat treatment, wherein the intermetallic layers comprises a first intermetallic layer of (Cu,Ni)(Sn,In), a second intermetallic layer of (Cu,Ni)(Sn,In)and a third intermetallic layer of (Cu,Ni)(Sn,In). Therefore, the formed intermetallic layers makes the Ni/In/Sn/Cu multilayer structure performs good wettability, ductility, creep resistance, and fatigue resistance. Moreover, this Ni/In/Sn/Cu multilayer structure can be made by low-temperature bonding process, so that Ni/In/Sn/Cu multilayer structure can be an alternative solder for replacing the traditional high-temperature Pb solder and being applied in the package process of 3D IC.