The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2015

Filed:

Jul. 28, 2011
Applicants:

Antonio D. Corcoles Gonzalez, Mount Kisco, NY (US);

Jiansong Gao, Boulder, CO (US);

Dustin A. Hite, Boulder, CO (US);

George A. Keefe, Cortlandt Manor, NY (US);

David P. Pappas, Louisville, CO (US);

Mary E. Rothwell, Ridgefield, CT (US);

Matthias Steffen, Cortlandt Manor, NY (US);

Chang C. Tsuei, Chappaqua, NY (US);

Michael R. Vissers, Erie, CO (US);

David S. Wisbey, Lafayette, CO (US);

Inventors:

Antonio D. Corcoles Gonzalez, Mount Kisco, NY (US);

Jiansong Gao, Boulder, CO (US);

Dustin A. Hite, Boulder, CO (US);

George A. Keefe, Cortlandt Manor, NY (US);

David P. Pappas, Louisville, CO (US);

Mary E. Rothwell, Ridgefield, CT (US);

Matthias Steffen, Cortlandt Manor, NY (US);

Chang C. Tsuei, Chappaqua, NY (US);

Michael R. Vissers, Erie, CO (US);

David S. Wisbey, Lafayette, CO (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 39/14 (2006.01); H01L 39/24 (2006.01); H01B 12/06 (2006.01); H01P 1/203 (2006.01); H01P 3/00 (2006.01); G06N 99/00 (2010.01); H01L 39/22 (2006.01); H01P 1/201 (2006.01); H01P 3/02 (2006.01);
U.S. Cl.
CPC ...
H01L 39/2416 (2013.01); G06N 99/002 (2013.01); H01L 39/14 (2013.01); H01L 39/223 (2013.01); H01P 1/201 (2013.01); H01P 1/2013 (2013.01); H01P 3/003 (2013.01); H01P 3/026 (2013.01);
Abstract

Low-loss superconducting devices and methods for fabricating low loss superconducting devices. For example, superconducting devices, such as superconducting resonator devices, are formed with a (200)-oriented texture titanium nitride (TiN) layer to provide high Q, low loss resonator structures particularly suitable for application to radio-frequency (RF) and/or microwave superconducting resonators, such as coplanar waveguide superconducting resonators. In one aspect, a method of forming a superconducting device includes forming a silicon nitride (SiN) seed layer on a substrate, and forming a (200)-oriented texture titanium nitride (TiN) layer on the SiN seed layer.


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