The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2015

Filed:

Feb. 21, 2012
Applicants:

Sang-wan Nam, Hwaseong-si, KR;

Chiweon Yoon, Seoul, KR;

Jung-soo Kim, Yongin-si, KR;

Inventors:

Sang-Wan Nam, Hwaseong-si, KR;

Chiweon Yoon, Seoul, KR;

Jung-Soo Kim, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/06 (2006.01); G11C 16/26 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/0483 (2013.01); H01L 27/11519 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 27/11582 (2013.01); H01L 27/11524 (2013.01); H01L 27/1157 (2013.01);
Abstract

According to example embodiments, a read method of a nonvolatile memory device includes Disclosed is a read method of a nonvolatile memory device which includes selecting one of a plurality of vertical strings in a nonvolatile memory device, judging a channel length between a common source line and a selected one of the plurality of vertical strings, selecting a sensing manner corresponding to the judged channel length, and performing a sensing operation according to the selected sensing manner. The plurality of vertical strings may extend in a direction perpendicular to a substrate of the nonvolatile memory device.


Find Patent Forward Citations

Loading…