The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2015

Filed:

Jun. 18, 2012
Applicants:

Seunguk Han, Suwon-si, KR;

Jay-bok Choi, Hwaseong-si, KR;

Dong-hyun Lee, Hwaseong-si, KR;

Namho Jeon, Hwaseong-si, KR;

Inventors:

Seunguk Han, Suwon-si, KR;

Jay-Bok Choi, Hwaseong-si, KR;

Dong-Hyun Lee, Hwaseong-si, KR;

Namho Jeon, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/02 (2006.01); G11C 5/06 (2006.01); H01L 27/02 (2006.01); H01L 27/105 (2006.01); H01L 29/40 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 27/088 (2006.01); H01L 27/108 (2006.01); H01L 27/115 (2006.01); H01L 27/11 (2006.01);
U.S. Cl.
CPC ...
G11C 5/025 (2013.01); H01L 27/0207 (2013.01); H01L 27/1052 (2013.01); H01L 29/4238 (2013.01); H01L 29/1033 (2013.01); H01L 27/088 (2013.01); H01L 27/10873 (2013.01); H01L 27/10882 (2013.01); H01L 27/10885 (2013.01); H01L 27/10888 (2013.01); H01L 27/10894 (2013.01); H01L 27/10897 (2013.01); H01L 27/11526 (2013.01); H01L 27/11573 (2013.01); H01L 27/1116 (2013.01);
Abstract

A semiconductor device includes a cell region including memory cells that have a selection element and a data storage element, and a driving circuit region including a driving transistor configured to operate the selection element. The driving transistor includes active portions defined by a device isolation pattern in a substrate and a gate electrode running across the active portion along a first direction, the gate electrode including channel portions of a ring-shaped structure. The driving transistor further includes first impurity doped regions disposed in the active portions that are surrounded by channel portions, and second impurity doped regions disposed in the active portion that are separated from the first impurity doped regions by the channel portions.


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