The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2015

Filed:

Sep. 14, 2012
Applicants:

Sang Chul Sul, Suwon-si, KR;

Hirosige Goto, Suwon-si, KR;

Kyung Ho Lee, Bucheon-si, KR;

Inventors:

Sang Chul Sul, Suwon-si, KR;

Hirosige Goto, Suwon-si, KR;

Kyung Ho Lee, Bucheon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 3/14 (2006.01); H04N 5/335 (2011.01); H04N 5/359 (2011.01); H01L 27/30 (2006.01); H04N 5/3745 (2011.01);
U.S. Cl.
CPC ...
H04N 5/3591 (2013.01); H01L 27/307 (2013.01); H04N 5/3745 (2013.01);
Abstract

An image sensor and an image sensing method are provided. The image sensor includes a semiconductor substrate; a photoelectric converter comprising a bias unit, which comprises a first electrode and a second electrode, and an organic photoelectric conversion layer, which selectively absorbs light and converts the light into electrons; a via contacting the second electrode to connect the photoelectric converter with the semiconductor substrate; a storage node configured to store electrons; a read-out unit to converts charge transferred from the storage node into an image signal; a pixel array comprising a plurality of pixels, each of which comprises an intermediate insulating layer; and an output circuit configured to read out the image signal from the pixel array. The quantity of light received by the organic photoelectric conversion layer is adjusted by a bias change of the bias unit.


Find Patent Forward Citations

Loading…