The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2015

Filed:

Mar. 09, 2012
Applicants:

Yong Min Cho, Suwon-si, KR;

Dong-ryul Lee, Suwon-si, KR;

Inventors:

Yong Min Cho, Suwon-si, KR;

Dong-Ryul Lee, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeongg-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/327 (2006.01); G11C 29/02 (2006.01); H01L 27/108 (2006.01); G01R 31/28 (2006.01); G01R 31/307 (2006.01); G11C 11/40 (2006.01); H01L 21/66 (2006.01); H01L 49/02 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G11C 29/022 (2013.01); H01L 27/10855 (2013.01); H01L 27/10894 (2013.01); G01R 31/2884 (2013.01); G01R 31/307 (2013.01); G11C 11/40 (2013.01); H01L 22/30 (2013.01); H01L 28/40 (2013.01); G11C 2029/5002 (2013.01);
Abstract

A method of detecting a defect of a semiconductor device includes forming test patterns and unit cell patterns in a test region a cell array region of a substrate, respectively, obtaining reference data with respect to the test patterns by irradiating an electron beam into the test region, obtaining cell data by irradiating the electron beam into the cell array region, and detecting defects of the unit cell patterns by comparing the obtained cell data with the obtained reference data.


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