The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2015
Filed:
Oct. 29, 2010
Kazuhiro Ohshita, Shiga, JP;
Toshio Yabuki, Shiga, JP;
Norio Sakae, Shiga, JP;
Daikin Industries, Ltd., Osaka, JP;
Abstract
A master transistor and a slave transistor are both insulated gate bipolar transistors. A slave diode is connected in anti-parallel to the slave transistor. The master transistor is brought into conduction if a current flowing in a master reactor becomes zero, and is brought into nonconduction after elapse of a first period. The slave transistor is brought into conduction subject to elapse of a certain period after the master transistor is brought into conduction that is one of conditions for conduction of the slave transistor, and is brought into nonconduction after elapse of a second period shorter than the first period. The certain period is shorter than a period from when the master transistor is brought into conduction until when the master transistor is brought into conduction again.