The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2015
Filed:
Mar. 15, 2013
Applicant:
Ipenval Consultant Inc., Hsinchu, TW;
Inventors:
Chao-Yuan Huang, Hsinchu, TW;
Yueh-Feng Ho, Hsinchu, TW;
Ming-Sheng Yang, Hsinchu, TW;
Hwi-Huang Chen, Hsinchu, TW;
Assignee:
IPEnval Consultant Inc., Hsinchu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 23/538 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 23/5386 (2013.01); H01L 23/49844 (2013.01); H01L 23/5221 (2013.01); H01L 23/5384 (2013.01);
Abstract
A semiconductor device comprises a substrate, a through-silicon via (TSV) penetrating the substrate, a plurality of first interconnect structures, right above the TSV, configured for electrically coupling the TSV to a higher-level interconnect, a second interconnect structure traversing the TSV from the top and being configured for interconnect routing of an active device and a plurality of dummy metal patterns, right above the TSV, electrically isolated from the TSV, the first interconnect structures and the second interconnect structure.