The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2015

Filed:

Apr. 20, 2011
Applicants:

Koichi Ishimoto, Ritto, JP;

Yoshitaka Tatara, Yasu, JP;

Shin Inuzuka, Konan, JP;

Sebastiano Conti, Messina, IT;

Inventors:

Koichi Ishimoto, Ritto, JP;

Yoshitaka Tatara, Yasu, JP;

Shin Inuzuka, Konan, JP;

Sebastiano Conti, Messina, IT;

Assignees:

OMRON Corporation, Kyoto-shi, Kyoto, JP;

STMicroelectronics Srl, Agrate Brianza Milan, IT;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/84 (2006.01); H04R 19/00 (2006.01); H04R 19/04 (2006.01);
U.S. Cl.
CPC ...
H04R 19/005 (2013.01); H04R 19/04 (2013.01); H04R 2410/03 (2013.01);
Abstract

In an acoustic sensor, a conductive vibrating membrane and a fixed electrode plate are disposed above a silicon substrate with an air gap provided therebetween, and the substrate has an impurity added to a surface thereof. A microphone includes an acoustic transducer; and an acquiring section that acquires a change in pressure as detected by the acoustic transducer. A method for manufacturing an acoustic transducer including a semiconductor substrate, a vibrating membrane, which is conductive, and a fixed electrode plate and detecting a pressure according to a change in capacitance between the vibrating membrane and the fixed electrode plate, the method includes an impurity adding step of adding an impurity to a surface of the semiconductor substrate; and a forming step of forming the vibrating membrane and the fixed electrode plate above the semiconductor substrate to which the impurity has been added.


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