The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2015
Filed:
Dec. 03, 2012
Applicant:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 21/768 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 29/417 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); H01L 29/401 (2013.01); H01L 21/76897 (2013.01); H01L 29/4991 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01); H01L 29/6656 (2013.01); H01L 21/823456 (2013.01); H01L 21/7682 (2013.01); H01L 21/823468 (2013.01); H01L 29/41783 (2013.01); H01L 29/4958 (2013.01); H01L 29/4966 (2013.01); H01L 27/088 (2013.01);
Abstract
Semiconductor devices, and a method of manufacturing the same, include a gate insulating film pattern over a semiconductor substrate. A gate electrode is formed over the gate insulating film pattern. A spacer structure is formed on at least one side of the gate electrode and the gate insulating film pattern. The spacer structure includes a first insulating film spacer contacting the gate insulating film pattern, and a second insulating film spacer on an outer side of the first insulating film spacer. The semiconductor device has an air gap between the first insulating film spacer and the second insulating film spacer.