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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8952452 B1

PDFFull Text
Date of Patent:
Feb. 10, 2015

Filed:

Dec. 03, 2012

Semiconductor devices and method of manufacturing the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Hong-Seong Kang, Hwaseong-Si, KR;

Yoon-Hae Kim, Suwon-Si, KR;

Jong-Shik Yoon, Yongin-Si, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;

Attorney:

Harness, Dickey & Pierce P.L.C.

Primary Examiner:

David Nhu

Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 21/768 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 29/417 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); H01L 29/401 (2013.01); H01L 21/76897 (2013.01); H01L 29/4991 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01); H01L 29/6656 (2013.01); H01L 21/823456 (2013.01); H01L 21/7682 (2013.01); H01L 21/823468 (2013.01); H01L 29/41783 (2013.01); H01L 29/4958 (2013.01); H01L 29/4966 (2013.01); H01L 27/088 (2013.01);
Abstract

Semiconductor devices, and a method of manufacturing the same, include a gate insulating film pattern over a semiconductor substrate. A gate electrode is formed over the gate insulating film pattern. A spacer structure is formed on at least one side of the gate electrode and the gate insulating film pattern. The spacer structure includes a first insulating film spacer contacting the gate insulating film pattern, and a second insulating film spacer on an outer side of the first insulating film spacer. The semiconductor device has an air gap between the first insulating film spacer and the second insulating film spacer.

Find Patent Forward Citations

Kang, Hong-Seong. (2015). Semiconductor devices and method of manufacturing the same (U.S. Patent No. 8952452). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8952452

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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