The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2015
Filed:
Aug. 16, 2011
Masaki Koyama, Nukata-gun, JP;
Yasushi Ookura, Okazaki, JP;
Akitaka Soeno, Toyota, JP;
Tatsuji Nagaoka, Aichi-gun, JP;
Takahide Sugiyama, Aichi-gun, JP;
Sachiko Aoi, Nagoya, JP;
Hiroko Iguchi, Aichi-gun, JP;
Masaki Koyama, Nukata-gun, JP;
Yasushi Ookura, Okazaki, JP;
Akitaka Soeno, Toyota, JP;
Tatsuji Nagaoka, Aichi-gun, JP;
Takahide Sugiyama, Aichi-gun, JP;
Sachiko Aoi, Nagoya, JP;
Hiroko Iguchi, Aichi-gun, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-Shi, JP;
Abstract
There is known a semiconductor device in which an IGBT structure is provided in an IGBT area and a diode structure is provided in a diode area, the IGBT area and the diode area are both located within a same substrate, and the IGBT area is adjacent to the diode area. In this type of semiconductor device, a phenomenon that carriers accumulated within the IGBT area flow into the diode area when the IGBT structure is turned off. In order to prevent this phenomenon, a region of shortening lifetime of carriers is provided at least in a sub-area that is within said IGBT area and adjacent to said diode area. In the sub-area, emitter of IGBT structure is omitted.