The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2015

Filed:

May. 23, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Sun-Il Shim, Seoul, KR;

Sung-Hoi Hur, Seoul, KR;

Jin-Ho Kim, Hwasung-si, KR;

Su-Youn Yi, Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 27/115 (2006.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1158 (2013.01); H01L 27/11521 (2013.01); H01L 27/11524 (2013.01); H01L 27/11551 (2013.01); H01L 27/11556 (2013.01); H01L 27/11568 (2013.01); H01L 27/11578 (2013.01); H01L 29/66825 (2013.01); H01L 29/66833 (2013.01); H01L 29/7881 (2013.01); H01L 29/792 (2013.01); H01L 29/7926 (2013.01);
Abstract

A vertical NAND flash memory device includes a substrate having a face and a string of serially connected flash memory cells on the substrate. A first flash memory cell is adjacent the face, and a last flash memory cell is remote from the face. The flash memory cells include repeating layer patterns that are stacked on the face, and a pillar that extends through the series of repeating layer patterns. The pillar includes at least one oblique wall. At least two of the series of repeating layer patterns in the string are of different thicknesses. Other vertical microelectronic devices and related fabrication methods are also described.


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