The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2015
Filed:
Jun. 07, 2013
Electronics and Telecommunications Research Institute, Daejeon, KR;
Hokyun Ahn, Daejeon, KR;
Jong-Won Lim, Daejeon, KR;
Jeong-Jin Kim, Jeollabuk-do, KR;
Hae Cheon Kim, Daejeon, KR;
Jae Kyoung Mun, Daejeon, KR;
Eun Soo Nam, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
A field effect transistor includes an active layer and a capping layer sequentially stacked on a substrate, and a gate electrode penetrating the capping layer and being adjacent to the active layer. The gate electrode includes a foot portion adjacent to the active layer and a head portion having a width greater than a width of the foot portion. The foot portion of an end part of the gate electrode has a width less than a width of the head portion of another part of the gate electrode and greater than a width of the foot portion of the another part of the gate electrode. The foot portion of the end part of the gate electrode further penetrates the active layer so as to be adjacent to the substrate.