The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2015
Filed:
Sep. 10, 2012
Shunpei Yamazaki, Setagaya, JP;
Atsuo Isobe, Isehara, JP;
Hiromachi Godo, Isehara, JP;
Takehisa Hatano, Atsugi, JP;
Sachiaki Tezuka, Atsugi, JP;
Suguru Hondo, Atsugi, JP;
Naoto Yamade, Isehara, JP;
Junichi Koezuka, Tochigi, JP;
Shunpei Yamazaki, Setagaya, JP;
Atsuo Isobe, Isehara, JP;
Hiromachi Godo, Isehara, JP;
Takehisa Hatano, Atsugi, JP;
Sachiaki Tezuka, Atsugi, JP;
Suguru Hondo, Atsugi, JP;
Naoto Yamade, Isehara, JP;
Junichi Koezuka, Tochigi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
Provided is a semiconductor device in which an oxide semiconductor layer is provided; a pair of wiring layers which are provided with the gate electrode layer interposed therebetween are electrically connected to the low-resistance regions; and electrode layers are provided to be in contact with the low-resistance regions, below regions where the wiring layers are formed.