The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2015
Filed:
Nov. 09, 2011
Applicants:
Sun-kook Kim, Hwaseong-si, KR;
Woong Choi, Seongnam-si, KR;
Yong-wan Jin, Seoul, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/16 (2006.01); B82Y 10/00 (2011.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); B82Y 30/00 (2011.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1606 (2013.01); B82Y 10/00 (2013.01); H01L 29/66431 (2013.01); H01L 29/7782 (2013.01); B82Y 30/00 (2013.01); H01L 29/2831 (2013.01); H01L 29/1054 (2013.01); Y10S 977/734 (2013.01);
Abstract
An example embodiment relates to a semiconductor device including a semiconductor element. The semiconductor element may include a plurality of unit layers spaced apart from each other in a vertical direction. Each unit layer may include a patterned graphene layer. The patterned graphene layer may be a layer patterned in a nanoscale. The patterned graphene layer may have a nanomesh or nanoribbon structure. The semiconductor device may be a transistor or a diode. An example embodiment relates to a method of making a semiconductor device including a semiconductor element.