The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2015
Filed:
Apr. 13, 2010
Applicant:
Jerry M. Olson, Lakewood, CO (US);
Inventor:
Jerry M. Olson, Lakewood, CO (US);
Assignee:
Sol Voltaics AB, Lund, SE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); B82Y 15/00 (2011.01); H01L 27/142 (2014.01); H01L 31/061 (2012.01); H01L 31/0687 (2012.01); H01L 31/0693 (2012.01); H01L 31/0725 (2012.01); H01L 31/078 (2012.01);
U.S. Cl.
CPC ...
H01L 31/03529 (2013.01); H01L 27/1422 (2013.01); H01L 31/061 (2013.01); H01L 31/0687 (2013.01); H01L 31/0693 (2013.01); H01L 31/0725 (2013.01); H01L 31/078 (2013.01); Y02E 10/544 (2013.01); Y10S 977/762 (2013.01); Y10S 977/948 (2013.01); Y10S 977/954 (2013.01);
Abstract
A multi junction photovoltaic cell for converting light into electrical energy, comprising a substrate () having a surface (), wherein a region () at the surface () of the substrate () is doped such that a first p-n junction is formed in the substrate (). The photovoltaic cell has a nanowire () that is arranged on the surface () of the substrate () at a position where the doped region () is located in the substrate (), such that a second p-n junction is formed at the nanowire () and in series connection with the first p-n junction.