The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2015
Filed:
Apr. 05, 2012
Applicants:
Naomi Yanai, Kuwana, JP;
Yuka Kase, Kuwana, JP;
Hiroyuki Ogawa, Nagoya, JP;
Inventors:
Assignee:
Fujitsu Semiconductor Limited, Yokohama, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01); H01L 21/762 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02057 (2013.01); H01L 21/31111 (2013.01); H01L 21/67028 (2013.01); H01L 21/67057 (2013.01); H01L 21/76224 (2013.01); H01L 27/11546 (2013.01); Y10S 438/963 (2013.01);
Abstract
A semiconductor device production method includes: treating a wafer which contains a silicon substrate with dilute hydrofluoric acid in a bath; introducing water into the bath while discharging the dilute hydrofluoric acid from the bath; and introducing HOand warm water warmer than the above-mentioned water into the bath after the discharge of dilute hydrofluoric acid from the bath in such a manner that the introduction of warm water is started simultaneously with the start of HOsupply or subsequently to the start of HOsupply.