The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2015
Filed:
May. 15, 2013
National Institute of Advanced Industrial Science and Technology, Chiyoda-ku, Tokyo, JP;
Denki Kagaku Kogyo Kabushiki Kaisha, Chuo-ku, Tokyo, JP;
Denki Kagaku Kogyo Kabushiki Kaisha, Tokyo, JP;
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Abstract
A silicon carbide powder for the production of a silicon carbide single crystal has an average particle diameter of 100 μm or more and 700 μm or less and a specific surface area of 0.05 m/g or more and 0.30 m/g or less. A method for producing a silicon carbide powder for the production of the silicon carbide single crystal including sintering a silicon carbide powder having an average particle diameter of 20 μm or less under pressure of 70 MPa or less at a temperature of 1900° C. or more and 2400° C. or less and in a non-oxidizing atmosphere, thereby obtaining a sintered body having a density of 1.29 g/cmor more; adjusting particle size by means of pulverization of the sintered body; and removing impurities by means of an acid treatment.