The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2015

Filed:

Dec. 21, 2010
Applicants:

Hyo-san Lee, Gyeonggo-do, KR;

Chang-ki Hong, Gyeonggi-do, KR;

Kun-tack Lee, Gyeonggi-do, KR;

Jeong-nam Han, Seoul, KR;

Inventors:

Hyo-san Lee, Gyeonggo-do, KR;

Chang-ki Hong, Gyeonggi-do, KR;

Kun-tack Lee, Gyeonggi-do, KR;

Jeong-nam Han, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F 1/08 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67276 (2013.01); H01L 21/67028 (2013.01);
Abstract

Provided are an apparatus and method for treating wafers using a supercritical fluid. The wafer treatment apparatus includes a plurality of chambers; a first supply supplying a first fluid in a supercritical state; a second supply supplying a mixture of the first fluid and a second fluid; a plurality of first and second valves; and a controller selecting a first chamber of the plurality of chambers for wafer treatment to control the open/closed state of each of the plurality of first valves so that the first fluid can be supplied only to the first chamber of the plurality of chambers and selecting a second chamber of the plurality of chambers to control the open/closed state of each of the plurality of second valves so that the mixture of the first fluid and a second fluid can be supplied only to the second chamber of the plurality of chambers. The wafer treatment method involves performing a predetermined treatment such as etching, cleaning or drying on wafers within only one of the plurality of chambers, followed by wafer treatment on the succeeding chamber, and thus allowing for sequential wafer treatment within each of the plurality of chambers.


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