The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2015
Filed:
Jul. 10, 2012
IN Gyoo Kim, Daejeon, KR;
Gyungock Kim, Daejeon, KR;
Sang Hoon Kim, Daejeon, KR;
Jiho Joo, Goyang, KR;
Ki Seok Jang, Daejeon, KR;
In Gyoo Kim, Daejeon, KR;
Gyungock Kim, Daejeon, KR;
Sang Hoon Kim, Daejeon, KR;
JiHo Joo, Goyang, KR;
Ki Seok Jang, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
The inventive concept provides semiconductor laser devices and methods of fabricating the same. According to the method, a silicon-crystalline germanium layer for emitting a laser may be formed in a selected region by a selective epitaxial growth (SEG) method. Thus, surface roughness of both ends of a Fabry Perot cavity formed of the silicon-crystalline germanium layer may be reduced or minimized, and a cutting process and a polishing process may be omitted in the method of fabricating the semiconductor laser device.