The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2015

Filed:

Oct. 01, 2010
Applicants:

Tomoyuki Kamiyama, Wako, JP;

Keisuke Korekado, Wako, JP;

Inventors:

Tomoyuki Kamiyama, Wako, JP;

Keisuke Korekado, Wako, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01C 3/08 (2006.01); G01S 17/10 (2006.01); G01S 7/481 (2006.01); G01S 7/484 (2006.01); G01S 7/486 (2006.01); G01S 7/487 (2006.01); G01S 17/89 (2006.01); H01L 27/146 (2006.01); H01L 31/0224 (2006.01); H01L 31/103 (2006.01); H01L 31/109 (2006.01);
U.S. Cl.
CPC ...
G01S 17/10 (2013.01); G01S 7/4816 (2013.01); G01S 7/484 (2013.01); G01S 7/4868 (2013.01); G01S 7/4876 (2013.01); G01S 17/89 (2013.01); H01L 27/14607 (2013.01); H01L 27/1461 (2013.01); H01L 31/022408 (2013.01); H01L 31/103 (2013.01); H01L 31/109 (2013.01);
Abstract

A first photoelectric conversion element for detecting light and converting the light into photoelectrons comprises one buried photodiode formed in a semiconductor substrate, and a plurality of MOS diodes each having an electrode formed on the semiconductor substrate with an insulator interposed therebetween. The buried photodiode has a comb shape, in which a plurality of diverging portions are disposed to diverge from one portion, when viewed from the top thereof, and the respective electrodes of the MOS diodes are disposed so as to be nested between the plurality of diverging portions of the buried photodiode when viewed from the tops thereof.


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