The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2015
Filed:
Sep. 26, 2008
Applicants:
Hao Huang, New York, NY (US);
Yu Yao, Cambridge, MA (US);
C. Forbes Dewey, Boston, MA (US);
Moungi G. Bawendi, Cambridge, MA (US);
Inventors:
Hao Huang, New York, NY (US);
Yu Yao, Cambridge, MA (US);
C. Forbes Dewey, Boston, MA (US);
Moungi G. Bawendi, Cambridge, MA (US);
Assignee:
Massachusetts Institute of Technology, Cambridge, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04N 7/18 (2006.01); G01N 21/64 (2006.01);
U.S. Cl.
CPC ...
G01N 21/6458 (2013.01); G01N 21/6428 (2013.01); G01N 2021/6441 (2013.01);
Abstract
A method of imaging microscopic objects includes determining the relative depths of two or more semiconductor nanocrystals by analyzing images of the semiconductor nanocrystals at varying z-displacements.