The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2015

Filed:

Sep. 26, 2012
Applicants:

Chenling Huang, San Diego, CA (US);

Haibo Fei, San Diego, CA (US);

Matthew D. Sienko, San Diego, CA (US);

Inventors:

Chenling Huang, San Diego, CA (US);

Haibo Fei, San Diego, CA (US);

Matthew D. Sienko, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F 3/217 (2006.01);
U.S. Cl.
CPC ...
H03F 3/217 (2013.01);
Abstract

A class D power amplifier is provided. The class D power amplifier includes a class D driver circuit having a plurality of output transistors, at least one active clamp circuit coupled to at least one output transistor of the plurality of output transistors, and at least one filter bank circuit coupled to the at least one active clamp circuit for controlling a voltage of the at least one output transistor. Accordingly, a voltage across a drain node and source node (VDS), a voltage across a gate node and source node (VGS), and a voltage across the gate node and drain node (VGD) of the output transistors is reduced to increase reliability of the power amplifier while consuming less power and utilizing less die area.


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