The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2015

Filed:

Feb. 07, 2013
Applicant:

Purdue Research Foundation, West Lafayette, IN (US);

Inventors:

Muhammad Ashraful Alam, West Lafayette, IN (US);

Sourabh Dongaonkar, West Lafayette, IN (US);

Assignee:

Purdue Research Foundation, West Lafayette, IN (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/05 (2014.01); H01L 31/18 (2006.01); H01L 31/02 (2006.01);
U.S. Cl.
CPC ...
H01L 31/18 (2013.01); H01L 31/02 (2013.01);
Abstract

Conductive layer(s) in a thin film photovoltaic (TFPV) panel are divided by first scribe curves into photovoltaic cells connected in series. At least one of the layers is scribed to isolate a shunt defect in a cell from parts of that cell away from the defect. The isolation scribes can substantially follow or parallel current-flow lines established by the design of the panel. A TFPV panel can be altered by, using a controller, automatically locating a shunt defect and scribing at least one of the conductive layers along two spaced-apart second scribe curves. Each second scribe curve can intersect the two first scribe curves that bound the cell with the defect. The two second scribe curves can be on opposite sides of the defect.


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