The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2015

Filed:

Sep. 04, 2013
Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;

Inventors:

Ryuji Masuyama, Kamakura, JP;

Yoshihiro Yoneda, Isehara, JP;

Hideki Yagi, Machida, JP;

Naoko Inoue, Yokohama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2014.01); H01L 21/00 (2006.01); G02B 6/00 (2006.01); G02B 6/42 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02325 (2013.01); H01L 31/0232 (2013.01); G02B 6/42 (2013.01);
Abstract

A method for manufacturing an optical waveguide receiver includes the steps of growing first and second stacked semiconductor layer sections, the second stacked semiconductor layer section including a core layer and a cladding layer; forming a first mask including first and second portions; etching the first and second stacked semiconductor layer sections by using the first mask, the first and second stacked semiconductor layer sections covered with the first portion being etched in a mesa structure, the second stacked semiconductor layer section covered with the second portion being etched in a terrace-shaped structure; removing the second portion from the first mask with the first portion left; selectively etching the cladding layer until exposing a surface of the core layer; and sequentially forming a first metal layer, an insulating film, and a second metal layer on the core layer exposed in the step of selectively etching the cladding layer.


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