The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2015
Filed:
Jan. 11, 2013
Tomohiko Sato, Toyota, JP;
Tomohiko Sato, Toyota, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-Shi, JP;
Abstract
In a switching element, a first region that is exposed on an upper surface of a semiconductor substrate, a second region that is exposed on the upper surface of the substrate and extends to below the first region, and a third region that is formed below the second region, are formed on the substrate. A trench is formed in the upper surface of the substrate. A gate electrode has a first portion that extends from a depth of the first region to a depth of the third region at at least a portion in the trench formed in an area where the first region is exposed, and a second portion that is formed to a depth of the second region, and does not reach the depth of the third region, at at least a portion in the trench formed in an area where the second region is exposed.