The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2015

Filed:

Sep. 04, 2012
Applicants:

Ki Hong Lee, Gyeonggi-do, KR;

Seung Ho Pyi, Gyeonggi-do, KR;

Hyun Soo Shon, Gyeonggi-do, KR;

Inventors:

Ki Hong Lee, Gyeonggi-do, KR;

Seung Ho Pyi, Gyeonggi-do, KR;

Hyun Soo Shon, Gyeonggi-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 29/76 (2006.01); H01L 29/788 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes word lines and interlayer insulating layers alternately stacked over a substrate, vertical channel layers protruding from the substrate and passing through the word lines and the interlayer insulating layers, a tunnel insulating layer surrounding each of the vertical channel layers, a charge trap layer surrounding the tunnel insulating layer, wherein first regions of the charge trap layer between the tunnel insulating layer and the word lines have a thickness smaller than a thickness of second regions thereof between the tunnel insulating layer and the interlayer insulating layers, and first charge blocking layer patterns surrounding the first regions of the charge trap layer.


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