The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2015
Filed:
Nov. 14, 2011
Applicants:
Sun-kook Kim, Hwaseong-si, KR;
Woong Choi, Seongman-si, KR;
Sang-yoon Lee, Seoul, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01); H01L 51/00 (2006.01); H01L 51/05 (2006.01); H01L 51/42 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0673 (2013.01); H01L 29/1029 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); H01L 29/1033 (2013.01); H01L 29/775 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01); H01L 51/0048 (2013.01); H01L 51/0558 (2013.01); H01L 51/0579 (2013.01); H01L 51/0554 (2013.01); H01L 51/0562 (2013.01); H01L 51/424 (2013.01); Y02E 10/549 (2013.01);
Abstract
An example embodiment relates to a transistor including a channel layer. A channel layer of the transistor may include a plurality of unit layers spaced apart from each other in a vertical direction. Each of the unit layers may include a plurality of unit channels spaced apart from each other in a horizontal direction. The unit channels in each unit layer may form a stripe pattern. Each of the unit channels may include a plurality of nanostructures. Each nanostructure may have a nanotube or nanowire structure, for example a carbon nanotube (CNT).