The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2015
Filed:
Aug. 22, 2012
Chen-zi Liao, Nantou County, TW;
Chih-wei HU, Taoyuan County, TW;
Yen-hsiang Fang, New Taipei, TW;
Rong Xuan, New Taipei, TW;
Chen-Zi Liao, Nantou County, TW;
Chih-Wei Hu, Taoyuan County, TW;
Yen-Hsiang Fang, New Taipei, TW;
Rong Xuan, New Taipei, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A nitride semiconductor structure is provided. The nitride semiconductor structure at least includes a silicon substrate, a AlN layer, a AlGaN layer and a GaN layer formed on the AlGaN layer. The silicon substrate has a surface tilted at 0<tilted≦0.5° with respect to a axis perpendicular to a (111) crystal plane, and the AlN layer is formed on the surface. The AlGaN layer is formed on the AlN layer. Moreover, an Al content in the AlGaN layer is decreased gradually in a layer thickness direction from the silicon substrate side toward the GaN layer side.