The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2015
Filed:
Aug. 08, 2012
Ya-wen Lin, Hsinchu, TW;
Po-min Tu, Hsinchu, TW;
Shih-cheng Huang, Hsinchu, TW;
Chia-hung Huang, Hsinchu, TW;
Shun-kuei Yang, Hsinchu, TW;
Ya-Wen Lin, Hsinchu, TW;
Po-Min Tu, Hsinchu, TW;
Shih-Cheng Huang, Hsinchu, TW;
Chia-Hung Huang, Hsinchu, TW;
Shun-Kuei Yang, Hsinchu, TW;
Advanced Optoelectronic Technology, Inc., Hsinchu Hsien, TW;
Abstract
A light emitting diode (LED) includes a substrate, a buffer layer and an epitaxial structure. The substrate has a first surface with a patterning structure formed thereon. The patterning structure includes a plurality of projections. The buffer layer is arranged on the first surface of the substrate. The epitaxial structure is arranged on the buffer layer. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer arranged on the buffer layer in sequence. The first semiconductor layer has a second surface attached to the active layer. A distance between a peak of each the projections and the second surface of the first semiconductor layer is ranged from 0.5 μm to 2.5 μm.