The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2015

Filed:

Jan. 21, 2011
Applicants:

Yukishige Saito, Minato-ku, JP;

Kimihiko Ito, Minato-ku, JP;

Hiromitsu Hada, Minato-ku, JP;

Inventors:

Yukishige Saito, Minato-ku, JP;

Kimihiko Ito, Minato-ku, JP;

Hiromitsu Hada, Minato-ku, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 47/00 (2006.01); H01L 23/522 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5228 (2013.01); H01L 45/145 (2013.01); H01L 45/04 (2013.01); H01L 45/1233 (2013.01); H01L 45/1675 (2013.01);
Abstract

Disclosed is a semiconductor device including a resistive change element between a first wiring and a second wiring, which are arranged in a vertical direction so as to be adjacent to each other, with an interlayer insulation film being interposed on a semiconductor substrate. The resistive change element includes a lower electrode, a resistive change element film made of a metal oxide and an upper electrode. Since the upper electrode on the resistive change element film is formed as part of a plug for the second wiring, a structure in which a side surface of the upper electrode is not in direct contact with the side surface of the metal oxide or the lower electrode is provided so that it is possible to realize excellent device characteristics, even when a byproduct is adhered to the side wall of the metal oxide or the lower electrode in the etching thereof.


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