The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2015
Filed:
May. 06, 2010
Applicant:
Wen-hsiung Chang, Hsinchu, TW;
Inventor:
Wen-Hsiung Chang, Hsinchu, TW;
Assignee:
Ineffable Cellular Limited Liability Company, Wilmington, DE (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/72 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 21/76802 (2013.01); H01L 21/76885 (2013.01);
Abstract
A semiconductor process includes the following steps. Firstly, a conductive substrate is provided. Then, at least one insulating pattern is formed on the conductive substrate. Thereafter at least one metal pattern is formed on the insulating pattern. After that, a passivation layer is formed on the conductive substrate to cover the metal pattern by an electroplating process.