The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2015
Filed:
Jun. 19, 2013
Lee W. Tutt, Webster, NY (US);
Shelby F. Nelson, Pittsford, NY (US);
Lee W. Tutt, Webster, NY (US);
Shelby F. Nelson, Pittsford, NY (US);
Eastman Kodak Company, Rochester, NY (US);
Abstract
Producing a transistor includes providing a substrate including in order a first electrically conductive material layer positioned on the substrate and a first electrically insulating material layer positioned on the first electrically conductive material layer. A gate including a reentrant profile is formed from an electrically conductive material layer stack provided on the first electrically insulating material layer in which a first portion of the gate is sized and positioned to extend beyond a second portion of the gate. The gate including the reentrant profile and at least a portion of the first electrically insulating material layer are conformally coated with a second electrically insulating material layer. The second electrically insulating material layer is conformally coated the with a semiconductor material layer. A source and drain electrodes are formed simultaneously by directionally depositing a second electrically conductive material layer on portions of the semiconductor material layer.