The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2015
Filed:
Nov. 21, 2012
Polycrystalline silicon thick films for photovoltaic devices or the like, and methods of making same
Applicant:
Guardian Industries Corp., Auburn Hills, MI (US);
Inventors:
Vijayen S. Veerasamy, Ann Arbor, MI (US);
Martin D. Bracamonte, Pinehurst, NC (US);
Assignee:
Guardian Industries Corp., Auburn Hills, MI (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/04 (2006.01); C23C 16/02 (2006.01); C30B 25/18 (2006.01); C30B 29/06 (2006.01); H01L 31/0368 (2006.01); H01L 31/18 (2006.01); C23C 16/24 (2006.01); C23C 16/44 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02595 (2013.01); H01L 29/04 (2013.01); C23C 16/0281 (2013.01); C30B 25/18 (2013.01); C30B 29/06 (2013.01); H01L 21/02672 (2013.01); H01L 21/02422 (2013.01); H01L 21/02532 (2013.01); H01L 21/02601 (2013.01); H01L 31/03682 (2013.01); H01L 31/182 (2013.01); C23C 16/24 (2013.01); C23C 16/44 (2013.01);
Abstract
A method of manufacturing a polycrystalline silicon film includes: depositing a catalyst layer including nickel and depositing nickel nanoparticles on a substrate; exposing the catalyst layer and the nanoparticles to at least silane gas; and heat treating the substrate coated with the catalyst layer and the nanoparticles during at least part of the exposing to silane gas in growing a silicon based film on the substrate.