The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2015
Filed:
Oct. 21, 2009
Applicants:
Evelyn Scheer, Stockstadt, DE;
Fabio Pieralisi, Aschaffenburg, DE;
Marcus Bender, Hanau, DE;
Inventors:
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 29/45 (2006.01); H01L 21/677 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/458 (2013.01); H01L 21/6776 (2013.01); H01L 29/4908 (2013.01); H01L 29/66765 (2013.01);
Abstract
A method of producing a semiconductor device is provided, the semiconductor device including a substrate, a semiconductor layer and at least one metallization layer adjacent to at least one element chosen from the substrate and the semiconductor layer, the method including forming at least one metallization layer which, adjacent to at least one element chosen from the substrate and the semiconductor layer, includes oxygen.