The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2015
Filed:
Sep. 26, 2012
Sandia Corporation, Albuquerque, NM (US);
Gregory N. Nielson, Albuquerque, NM (US);
Carlos Anthony Sanchez, Belen, NM (US);
Anna Tauke-Pedretti, Albuquerque, NM (US);
Bongsang Kim, Albuquerque, NM (US);
Jeffrey Cederberg, Albuquerque, NM (US);
Murat Okandan, Edgewood, NM (US);
Jose Luis Cruz-Campa, Albuquerque, NM (US);
Paul J. Resnick, Albuquerque, NM (US);
Sandia Corporation, Albuquerque, NM (US);
Abstract
A method includes forming a release layer over a donor substrate. A plurality of devices made of a first semiconductor material are formed over the release layer. A first dielectric layer is formed over the plurality of devices such that all exposed surfaces of the plurality of devices are covered by the first dielectric layer. The plurality of devices are chemically attached to a receiving device made of a second semiconductor material different than the first semiconductor material, the receiving device having a receiving substrate attached to a surface of the receiving device opposite the plurality of devices. The release layer is etched to release the donor substrate from the plurality of devices. A second dielectric layer is applied over the plurality of devices and the receiving device to mechanically attach the plurality of devices to the receiving device.