The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2015

Filed:

Nov. 30, 2011
Applicants:

Daniel L. Meier, Atlanta, GA (US);

Ajeet Rohatgi, Marietta, GA (US);

Inventors:

Daniel L. Meier, Atlanta, GA (US);

Ajeet Rohatgi, Marietta, GA (US);

Assignee:

Suniva, Inc., Norcross, GA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 31/0747 (2012.01); H01L 31/068 (2012.01); H01L 31/20 (2006.01); H01L 31/0745 (2012.01); H01L 31/078 (2012.01);
U.S. Cl.
CPC ...
H01L 31/0745 (2013.01); H01L 31/0747 (2013.01); H01L 31/068 (2013.01); H01L 31/202 (2013.01); Y02E 10/547 (2013.01); H01L 31/078 (2013.01);
Abstract

A thin silicon solar cell is described. An example solar cell may be fabricated from a crystalline silicon wafer having a thickness of approximately 50 micrometers to 500 micrometers. The solar cell comprises a first region having a p-n homojunction, a second region that creates heterojunction surface passivation, and a third region that creates heterojunction surface passivation. Amorphous silicon layers are deposited on both sides of the silicon wafer. A final layer of transparent conductive oxide is formed on both sides. Metal contacts are applied to the transparent conductive oxide.


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