The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2015
Filed:
Dec. 18, 2013
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Akio Hasebe, Kanagawa, JP;
Naohiro Makihira, Kanagawa, JP;
Bunji Yasumura, Kanagawa, JP;
Mitsuyuki Kubo, Kanagawa, JP;
Fumikazu Takei, Kanagawa, JP;
Yoshinori Deguchi, Kanagawa, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
Provided is a method of manufacturing a semiconductor device including a step of testing every one of through-electrodes. A second probe test is conducted to check an electrical coupling state between a plurality of copper post bumps formed on the side of the surface of a wafer and electrically coupled to a metal layer and a plurality of bumps formed on the side of the back surface of the wafer and electrically coupled to the metal layer (also another metal layer) via a plurality of through-electrodes by probing to each of the bumps on the side of the back surface while short-circuiting between the copper post bumps (electrodes). By this test, conduction between the bumps (electrodes) on the back surface side is checked.