The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2015

Filed:

Mar. 30, 2009
Applicants:

Takao Saito, Nagoya, JP;

Masashi Hayakawa, Nagoya, JP;

Inventors:

Takao Saito, Nagoya, JP;

Masashi Hayakawa, Nagoya, JP;

Assignee:

NGK Insulators, Ltd., Nagoya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/503 (2006.01); C23C 16/515 (2006.01); C23C 16/26 (2006.01); C23C 16/458 (2006.01); H03K 3/57 (2006.01);
U.S. Cl.
CPC ...
C23C 16/515 (2013.01); C23C 16/26 (2013.01); C23C 16/4587 (2013.01); C23C 16/503 (2013.01); H03K 3/57 (2013.01);
Abstract

A DLC film mass-producing apparatusincludes a chamberconnected to ground. In the chamber, a plurality of plate-shaped substratesare disposed in parallel at regular intervals, without disposing a counter electrode that faces each of the plate-shaped substrates. Sputtering cleaning is then conducted by plasma discharge and an underlying contact layer is formed on each of the plate-shaped substrates. Subsequently, a DLC film is produced on each of the plate-shaped substratesby injecting a carbon source gas into the chambersuch that the internal pressure of the chamberreaches 0.1 to 10 Pa and applying a negative DC pulse voltage having a pulse half width of 0.1 to 3 μsec to each of the plate-shaped substratesto generate plasma.


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