The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2015

Filed:

Nov. 01, 2010
Applicants:

Tomohiro Nomiyama, Machida, JP;

Suzuya Yamada, Machida, JP;

Hisayuki Hashimoto, Machida, JP;

Inventors:

Tomohiro Nomiyama, Machida, JP;

Suzuya Yamada, Machida, JP;

Hisayuki Hashimoto, Machida, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C04B 35/597 (2006.01); C04B 41/85 (2006.01); C01B 21/082 (2006.01); C04B 35/645 (2006.01); C04B 41/00 (2006.01); C04B 41/50 (2006.01); C09K 11/08 (2006.01); C09K 11/77 (2006.01); C04B 111/80 (2006.01);
U.S. Cl.
CPC ...
C04B 41/85 (2013.01); C01B 21/0826 (2013.01); C01P 2002/52 (2013.01); C01P 2002/54 (2013.01); C01P 2002/84 (2013.01); C01P 2004/61 (2013.01); C04B 35/597 (2013.01); C04B 35/6455 (2013.01); C04B 41/009 (2013.01); C04B 41/5016 (2013.01); C04B 2111/807 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/3865 (2013.01); C04B 2235/3878 (2013.01); C04B 2235/3895 (2013.01); C04B 2235/428 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/6562 (2013.01); C04B 2235/658 (2013.01); C04B 2235/6581 (2013.01); C04B 2235/662 (2013.01); C04B 2235/767 (2013.01); C04B 2235/9646 (2013.01); C09K 11/0883 (2013.01); C09K 11/7734 (2013.01);
Abstract

Provided is a production method of a β-sialon phosphor that europium ions are solid-solved in β-sialon, including a mixing process for mixing raw materials of the β-sialon phosphor; a burning process for burning the raw materials after the mixing process to form the β-sialon phosphor; a HIP treatment process in which the β-sialon phosphor after the burning process is subjected to a HIP treatment; an annealing process in which the β-sialon phosphor after the HIP treatment process is subjected to an annealing treatment; and an acid treatment process in which the β-sialon phosphor after the annealing process is subjected to an acid treatment. According to the production method of a β-sialon phosphor, a β-sialon phosphor excellent in luminescence intensity is obtained.


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