The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2015

Filed:

Jul. 19, 2011
Applicants:

Hideki Shimoi, Hamamatsu, JP;

Keisuke Araki, Hamamatsu, JP;

Inventors:

Hideki Shimoi, Hamamatsu, JP;

Keisuke Araki, Hamamatsu, JP;

Assignee:

Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); B23K 26/38 (2014.01); B23K 26/40 (2014.01); H01L 21/306 (2006.01); H01L 21/48 (2006.01); B23K 26/00 (2014.01);
U.S. Cl.
CPC ...
B23K 26/381 (2013.01); B23K 26/4075 (2013.01); H01L 21/30604 (2013.01); H01L 21/30625 (2013.01); H01L 21/486 (2013.01); B23K 26/006 (2013.01); B23K 26/383 (2013.01); B23K 26/4095 (2013.01);
Abstract

A laser processing method of converging laser light into an object to be processed made of silicon so as to form a modified region and etching the object along the modified region so as to form the object with a through hole comprises an etch resist film producing step of producing an etch resist film resistant to etching on an outer surface of the object; a laser light converging step of converging the laser light at the object after the etch resist film producing step so as to form the modified region along a part corresponding to the through hole in the object and converging the laser light at the etch resist film so as to form a defect region along a part corresponding to the through hole in the etch resist film; and an etching step of etching the object after the laser light converging step so as to advance the etching selectively along the modified region and form the through hole.


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