The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2015
Filed:
Sep. 17, 2013
Applicant:
Panasonic Corporation, Osaka, JP;
Inventors:
Hideki Kasugai, Shiga, JP;
Kenji Orita, Osaka, JP;
Hiroshi Ohno, Osaka, JP;
Kazuhiko Yamanaka, Osaka, JP;
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/323 (2006.01); H01L 33/20 (2010.01); H01S 5/32 (2006.01); H01L 33/00 (2010.01); H01S 5/042 (2006.01); H01S 5/20 (2006.01); H01S 5/22 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/323 (2013.01); H01L 33/20 (2013.01); H01S 5/3211 (2013.01); H01L 33/0045 (2013.01); H01S 5/0421 (2013.01); H01S 5/0425 (2013.01); H01S 5/2009 (2013.01); H01S 5/22 (2013.01); H01S 5/34333 (2013.01); H01S 5/3214 (2013.01);
Abstract
A nitride semiconductor light-emitting device having an optical waveguide includes, in the following order, at least: a first cladding layer; an active layer; and a second cladding layer, wherein the second cladding layer includes (i) a transparent conductive layer comprising a transparent conductor and (ii) a nitride semiconductor layer comprising a nitride semiconductor, the nitride semiconductor layer being formed closer to the active layer than the transparent conductive layer.